Things are starting to change for GaN power electronics ! Power GaN is entering mainstream consumer applications with the adoption of GaN HEMT by Chinese OEM Oppo in its 65W fast chargers. In addition, GaN is getting attention from various OEMs and Tier1s in the automotive industry. GaN is also expected to penetrate industrial and telecom power supply applications (datacom, base-stations, UPS, etc.). Yole Développement projects that the GaN power market will be worth over $350M by 2024, with a compound annual growth rate (CAGR) of 85%.
The power electronics industry is familiar with the companies that are actively promoting GaN technology, such as EPC, GaN Systems, Transphorm, Navitas, Exagan, Infineon or ON Semiconductor. Today, more companies are either joining the market, have announced ambitions to do this, or have betrayed their intentions through their patent publications. Many firms have GaN power patenting activity, and a core set of strong companies, with strong technology and IP, are ready to dominate the GaN power market in coming years.
In this report, Knowmade has thoroughly investigated the patent landscape related to GaN-based technologies and devices for power electronics applications. We have selected and analyzed more than 9,500 patents and patent applications published worldwide up to May 2019 and grouped into more than 4,100 patent families. These patents pertain to epiwafers (GaN-on-Si, GaN-on-Sapphire, etc.), semiconductor power devices (D-mode, E-mode, vertical device, p-doping, etc.), integration (SiP, SoC, monolithic integration, etc.), circuit and operating methods (cascode, half-bridge, power IC, etc.), and packaging (thermal management, stray inductance, etc.), for all functions (switch, converter, rectifier, inverter, etc.) and applications (power supply, PV, EV/HEV, UPS, fast charging, wireless charging, etc.).[by nevin]
Dr Nicolas Baron is CEO and co-founder of Knowmade. He manages the development and strategic orientation of the company and personally leads the semiconductor department. Nicolas is responsible for strategy advisory services to companies, assisting customers in defining the most appropriate technology and IP development strategies. He has more than 12 years experience in semiconductor related patent & technology analysis. Previously Nicolas was research assistant at the French research laboratory “CRHEA-CNRS” specializing in GaN technology for microelectronics and optoelectronics. He worked with Soitec/Picogiga on the development of a new generation of GaN on-Silicon transistor for power and RF applications. Dr. Nicolas Baron holds a Ph-D in Physics from the University of Nice Sophia-Antipolis, and a Master of Intellectual Property Strategies and Innovation from the European Institute for Enterprise and Intellectual Property (IEEPI), Strasbourg, France.