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|aabk z 000yy
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|aGaN and SiC and wide band gap materials for power electronics applications|b[ebook]|fHong Lin.
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210 |
|
|aLyon-Villeurbanne|cYole Développement|d2015.
|
215 |
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|a193 p.|cill., maps., tables|esup. (excel data).
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225 |
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|aFrom technologies to market
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300 |
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|aType of file:PDF format
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300 |
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|aIncludes bibliographical references.
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300 |
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|aConfidential, Multi-user License(限院內同仁使用)
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606 |
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|aPower electronics.|2lc
|
680 |
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|aTK7881|b.L65
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|aLin, |bHong
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|atw|b台經院|c20160324|gAACR2
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856 |
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|uhttps://library.tier.org.tw/EBOOK/GaN and SiC and wide band gap materials for power electronics applications/Yole GaN, SiC and WBG Materials for Power Electronics Application Oct 2015 Report_V003393.pdf|ze-book|2http
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856 |
2
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|uhttps://library.tier.org.tw/EBOOK/GaN and SiC and wide band gap materials for power electronics applications/Yole GaN, SiC and WBG Materials for Power Electronics Applications Oct 2015_V003446.xlsx|zsup. (excel)|2http
|